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may 2006 rev 3 1/17 17 STD90N02L STD90N02L-1 n-channel 24v - 0.0052 ? - 60a - dpak - ipak stripfet? iii power mosfet general features r ds(on) * qg industry?s benchmark conduction losses reduced switching losses reduced low threshold device in compliance with the 2002/95/ec european directive description this series of products utilizes the latest advanced design rules of st?s proprietary stripfet? technology. this is suitable for the most demanding dc-dc converter application where high efficiency is to be achieved. applications switching application internal schematic diagram type v dss r ds(on) i d STD90N02L 24v <0.006 ? 60a STD90N02L-1 24v <0.006 ? 60a 1 3 3 2 1 dpak ipak www.st.com order codes part number marking package packaging STD90N02L-1 d90n02l ipak tube STD90N02L d90n02l dpak tape & reel
contents STD90N02L - STD90N02L-1 2/17 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STD90N02L - STD90N02L-1 electrical ratings 3/17 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v spike (1) 1. guaranted when external rg=4.7 ? and tf electrical characteristics STD90N02L - STD90N02L-1 4/17 2 electrical characteristics (tcase =25c unless otherwise specified) table 3. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 25ma, v gs = 0 24 v i dss zero gate voltage drain current (v gs = 0) v ds = 20v, v ds = 20v,tc = 125c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 11.8 v r ds(on) static drain-source on resistance v gs = 10v, i d = 30a v gs = 5v, i d = 15a 0.0052 0.007 0.006 0.011 ? ? table 4. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward transconductance v ds =10v, i d = 18a 27 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =16v, f=1mhz, v gs =0 2050 545 70 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =10v, i d = 60a v gs =5v (see figure 15) 17 7.7 3.5 22 nc nc nc r g gate input resistance f=1mhz gate dc bias =0 test signal level =20mv open drain 0.5 1.5 3 ? q oss (2) 2. q oss. = c oss * d vin, c oss = c gd + c gd. (see appendix a ) output charge v ds =10v, v gs =0v 14 nc
STD90N02L - STD90N02L-1 electrical characteristics 5/17 table 5. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =10v, i d =30a, r g =4.7 ?, v gs =5v (see figure 17) 12 200 18 25 33 ns ns ns ns table 6. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) 60 240 a a v sd (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd =30a, v gs =0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =60a, di/dt = 100a/s, v dd =15v, tj=150c (see figure 20) 36 65 3.6 ns nc a
electrical characteristics STD90N02L - STD90N02L-1 6/17 2.1 electrical characteristics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characterisics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance
STD90N02L - STD90N02L-1 electrical characteristics 7/17 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics figure 12. normalized b vdss vs temperature
electrical characteristics STD90N02L - STD90N02L-1 8/17 the previous curve gives the single pulse safe operating area for unclamped inductive loads, under the following conditions: p d(ave) =0.5*(1.3*b vdss *i av ) e as(ar) =p d(ave) *t av where: i av is the allowable current in avalanche p d(ave) is the average power dissipation in avalanche (single pulse) t av is the time in avalanche figure 13. allowable i av vs time in avalanche
STD90N02L - STD90N02L-1 9/17 appendix a the power losses associated with the fets in a synchronous buck converter can be estimated using the equations shown in the table below. the formulas give a good approximation, for the sake of performance comparison, of how different pairs of devices affect the converter efficiency. however a very important parameter, the wotking temperature, is not considered. the real device behavior is really dependent on how the heat generated inside the devices is removed to allow for a safer working junction temperature. the low side (sw2) device requires: very low rds(on) to reduce conduction losses small qgls to reduce the gate charge losses small coss to reduce losses due to output capacitance small qrr to reduce losses on sw1 during its turn-on the cgd/cgs ratio lower than vth/vgg ratio especially with low drain to source voltage to avoid the cross conduction phenomenon. the high side (sw1) device requires: small rg and lg to allow higher gate current peak and to limit the voltage feedback on the gate small qg to have a faster commutation and to reduce gate charge losses low rds(on) to reduce the conduction losses figure 14. synchronous buck converter
STD90N02L - STD90N02L-1 10/17 table 7. power losses high side switch (sw1) low side switch (sw2) p conduction p switching zero voltage switching p diode recovery not applicable conduction not applicable p gate(qg) p qoss table 8. power losses parameters paramter meaning d duty-cycle q gsth post threshold gate charge q gls third quadrant gate charge pconduction on state losses pswitching on-off transition losses pdiode conduction and reverse recovery diode losses pgate gate driver losses p qoss output capacitance losses r ds on () i l 2 ? ? r ds on () i l 2 ? 1 ? () ? v in q gsth sw1 () q gd sw1 () + () ? f i l i g - -- - ? ? v 1 in q rr sw2 () ? f ? v fsw2 () i l t deadtime f ? ? ? q gsw1 () v gg ? f ? q gls sw2 () v gg ? f ? v in q oss sw1 () ? f ? 2 ------------------------------------------------ - v in q oss sw2 () ? f ? 2 ------------------------------------------------ -
STD90N02L - STD90N02L-1 test circuits 11/17 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform
package mechanical data STD90N02L - STD90N02L-1 12/17 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at :www.st.com
STD90N02L - STD90N02L-1 package mechanical data 13/17 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e
package mechanical data STD90N02L - STD90N02L-1 14/17 dim. mm. inch min. typ max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b4 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 d1 5.1 0.200 e 6.4 6.6 0.252 0.260 e1 4.7 0.185 e 2.28 0.090 e1 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l 1 0.039 (l1) 2.8 0.110 l2 0.8 0.031 l4 0.6 1 0.023 0.039 r 0.2 0.008 v2 0 8 0 8 dpak mechanical data 0068772-f
STD90N02L - STD90N02L-1 package mechanical data 15/17 5 package mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
revision history STD90N02L - STD90N02L-1 16/17 6 revision history table 9. revision history date revision changes 29-aug-2005 1 first release 07-apr-2006 2 new template 03-may-2006 3 new value on table 3 , new curve (see figure 13)
STD90N02L - STD90N02L-1 17/17 please read carefully: i nformation in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st? ) reserve th e r ight to make changes, corrections, modifications or improvements, to this document, and the products and services described her ein at an y t ime, without notice. a ll st products are sold pursuant to st?s terms and conditions of sale. p urchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st ass umes n o l iability whatsoever relating to the choice, selection or use of the st products and services described herein. n o license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. if any part of th is d ocument refers to any third party products or services it shall not be deemed a license grant by st for the use of such third p arty produc ts o r services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoeve r of suc h t hird party products or services or any intellectual property contained therein. u nless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implie d w arranty with respect to the use and/or sale of st products including without limitation implie d w arranties of merchantability, fitness for a particular purpose (and their equivalents under the law s o f any jurisdiction), or infringement of any patent, copyright or other intellectual property right. u nless expressly approved in writing by an authorize representative of st, st products are not designe d, a uthorized or warranted for use in military, air craft, space, life saving, or life sustaining application s, n or in products or systems, where failure or malfunction may result in personal injury, death, o r s evere property or environmental damage. r esale of st products with provisions different from the statements and/or technical features set forth in this document shall i mmediately vo id a ny warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoeve r, an y l iability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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